‘Wonder material’ graphene tapped for electronic memory devices – nanotechweb.org

Researchers from a team by University of California at Los Angeles describes in detail a new graphene based memory device on a next issue of Applied Physics Letters. In the new memory graphene is used to write and read the electric dipole moments of an underlying ferroelectric material in ferroelectric-field-effect-transistors (FFETs). They discovered that this graphene-FFET has a fidelity higher than other high density memory devices at low operating voltage. However improvement of performances is still required.

Check this at ‘Wonder material’ graphene tapped for electronic memory devices – nanotechweb.org.

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